Shallow Trench Isolated Buried N+ FAMOS Transistors for VLSI EPROMs

This paper presents a novel application of shallow trench isolation (less than one micron deep) to buried N' FAMOS (Floating gate Avalanche Injection MOS) transistors with applications to VLSI EPROMs. The trench isolation has improved not only bitline isolation but also the programming efficiency of an equally novel cross-point Advanced Contactless EPROM (ACE) cell.[1]