A Double Word Line Structure in ECL RAM

Soft error phenomena in ECL RAMs have been a serious problem. The soft error rate has been improved by both process and circuit technologies. The improvements in process technologies have been focused on the increase of cell capacitance and the decrease of radioactive contents in material. Circuit approach is optimization of voltage difference in memory cell, including the PNP Load Cell circuit. However, the PNP Load Cell circuit has left the problem of the long write pulse width.1M