Achieving material limit characteristics in silicon power devices

The present paper predicts the silicon limit characteristics of IGBTs, and proposes a novel device structure to achieve the limit. For power MOSFETs, the electrical characteristics have been sufficiently improved, so that the peripheral circuits are required to be improved for faster switching. The authors propose an ideal gate drive to realize the ultimate high speed switching of power MOSFETs. Integration of power devices and the gate drive circuits in a single chip is considered to be an ideal solution. The authors propose 1 chip solution and demonstrate 12V 10A 1chip DCDC converters. The authors also propose a new FOM for switching speed comparison of power devices.