Programming conditions for silicided poly-Si or copper electrically programmable fuses

Dynamical programming processes in electrically programmable (writable) fuses (e-fuses) with a narrow link of p-doped Ni-silicided poly-Si or Cu were studied, through slow I-V measurements of an e-fuse and a blowing FET made separately. The two I-V curves depicted in the same graph gave valuable knowledge of programming processes and suitable programming conditions. Maps of final resistance values for the two e-fuses are also useful when they are made in the pulse-width/pulsed-voltage plane.