Fabrication and in-plane electrical resistivity of Ge/SiGe quantum dot superlattices

The in-plane electrical resistivity of the Ge/SiGe dot superlattices was studied in this paper. It is found that the electrical resistivity depends on the dot density as well as the Ge thickness. Very low electrical resistivity (lower than 9.15 times 10^-2 Omegacm) is realized for the horizontal conductance.