Characterizations of a GaInNAs double-barrier quantum-well infrared photo-detector with the near-infrared photo-detection

A novel GalnNAs/AlAs/AlGaAs double-barrier quantum-well-infrared-photo-detector was characterized by photoluminescence, x-ray diffraction, photoluminescence excitation, photocurrent spectra and dark current measurements. The photoluminescence peak at ~1.2 eV and the photocurrent peak at 1.24μm originate from the interband transition and inter-subband transition, respectively, in the GalnNAs well. The dark current is as low as 10
^-8
~10
^-9
A. After annealing, the energy blue shift of the GINA photoluminescence peak decreases with increasing annealing temperature, and the energy difference between the GalnNAs photoluminescence excitation peak and the detection energy decreases with increasing detection energy. The k•p calculations agree with the above observations.