Characterization of barrier height due to metal for Schottky barrier diode

Dynamic characterization of barrier height due to metal for Schottky barrier diode are presented. The device is modeled using a self-consistent model. The model is based on the solution of semiconductor transport equations from the surface to the bulk region. The model includes the effect of oxide thickness at the metal semiconductor interface SiO₂/SiC; effective oxide charge at the interfacial layer included the fixed and mobile charges, and the effect of interface state charge density. A very good agreement between the simulated forward characteristics using the present model and published experimental data. The model is used to characterize the barrier height change due to metal of the Schottky contact.