Experimental study on the dielectric-deformation behavior of SIO2 in a sandwich structure

This paper reports an abnormal dielectric-deformation behavior of SiO2 observed in a sandwich structure fabricated by the MEMS process. It has been reported the dielectric constant is related to the mechanical strain (or stress) in many bulk materials including the non-crystalline SiO2; however, in our case, the results may not be explained by the existing effect. Special samples have been designed to study the abnormal dielectric-deformation behavior and it is shown the dielectric constant is also related to the bending deformation, or, in other words it is related to the strain gradient in the thermal SiO2.