Investigation of reflection and transmission coefficients on active multilayered semiconductor structure

The effect of carrier drift on the reflection and transmission coefficients on multilayered periodic semiconductor structure placed into external electrical field is considered in the work. We investigate a finite periodic structure composed of alternating layers of electron and hole semiconductors. It is assumed that the thickness of layers less than length of electromagnetic wave. It is investigated the dependencies of reflection and transmission coefficients on a frequency and drift velocity of carriers. It is shown that drift of carriers in layers leads to the appearance of instability.