Gallium nitride nanowire devices - fabrication, characterization, and transport properties

Gallium nitride nanowires offer a great deal of potential as they poses unique material properties like wide direct bandgaps, radiation hardness, mechanical and chemical stability. We have demonstrated nanoscale devices made from GaN nanowires utilizing only conventional batch microfabrication techniques. Nanowires were dielectrophoreticaly aligned to achieve large number of reliable devices.