Physics-based modeling of output conductance in nanoscale bulk MOSFET by analytically solving 2D poisson

Most compact models for the output conductance of bulk MOSFET require fitting parameters, which have a strong influence on the results (N. Arora, 1993). With this paper a new way to calculate the output conductance is shown, which uses the conformal mapping technique for solving the Poisson equation in 2D without the need to introduce unphysical fitting parameters. In a first step, a given electric field E_pis used to calculate the saturation voltage V_dsatt at pinch-off point. With increasing drain-source voltage V_dsthe pinch-off point moves in source direction. Because of that the electric field in the pinch-off point is expected to increase. We included this by obtaining a new electric field from a recalculation with a current equation in (A. Kloes and A. Krostka, 2000). Herewith electric field E_dsgets an additional V_ds dependency.