Characterization of coxniyo bimetallic oxide nanoparticles as charge trapping nodes in nonvolatile memory devices

The nanoparticles (NPs) have been widely used to supersede the conventional charge trapping layers (CTLs) of the silicon-oxide-nitride-oxide-silicon devices for reducing the charge loss due to a local leakage path. Moreover, to reduce the gate tunneling leakage current, the high-dielectric-constant (high-k) gate oxides with the identical equivalent-oxide thickness (EOT) are promising for the advanced metal-oxide-semiconductor (MOS) devices applications. Therefore, the NPs embedded in the high-k gate dielectric would be an attractive technology option for the nonvolatile memory device (NVM) applications.