2-Dimensional simulation and characterization of deep-submicron AlGaN/GaN HEMTs for high frequency applications

This paper presents the characterization of deep-submicron AlGaN/GaN HEMTs for high performance applications, using ATLAS device simulator. The simulations reported in this work involve optimization of the investigated structure. The high RF performance of the device is attributed to the high quality of material and also to optimized device processing. The results are in good agreement with the experimental data as well as with the simulated data.