Understanding Random Threshold Voltage Fluctuation by Comparing Multiple Fabs and Technologies

Random threshold voltage (V
_M
) fluctuation data obtained from multiple fabs, generations and technologies, as well as theoretical / TCAD results are carefully compared using a special normalization method. It is revealed that P-FET fluctuation can be almost fully accounted for by dopant fluctuation regardless of device generations and designs, whereas extra fluctuation mechanism(s) significantly contributes to N-FETs.