Low Temperature Implementation of Dopant-Segregated Band-edge Metallic S/D junctions in Thin-Body SOI p-MOSFETs

This paper proposes the implementation of a dopant segregated band-edge silicide using implantation-to-silicide and low temperature activation (500degC). The integration of platinum silicide coupled to boron segregation demonstrates a 50% enhancement of the current drive over the dopant-free approach. RF characterization unveils a cut-off frequency f
_T
of 180 GHz at L
_g
=30 nm without application of channel stressors.