Experimental setup for measuring the local temperature of active electronic components

A novel non-destructive and non-contacting technique for the local temperature measurement of heat spot in electronic component is presented. Highly-sensitive lock-in near infrared (NIR) thermography is used to localize the heat spot induced temperature variations down to 10^-1°C at a lateral resolution down to 3 μm. Speedy temperature evolution about 10 microseconds can be followed as using an integral InGaAs PIN photodiode assembled with the matched preamplifier.