Malfunction and Destruction Analysis of CMOS IC by Intentional High Power Microwave

We investigated the malfunction and destruction characteristics of the CMOS AND-and NAND-devices that manufactured the respective three different technologies under high power microwave (HPM) impact by magnetron. HPM was rated at a microwave output of 0 to 1,000 W, at a frequency of 2.45 GHz and was extracted into a standard rectangular waveguide (WR-340). Different CMOS AND-and NAND devices were located into the waveguide respectively. CMOS AND-and NAND-devices were damaged two types. One is malfunction which means no physical damage is done to the system and after a reset the system is going back into function. The other is destruction which means a physical damage of the system so that the system will not recover without a hardware repair. Destructed CMOS NAND devices were removed their surface and a chip conditions were analyzed by SEM. The SEM analysis of the damaged devices showed onchipwire destruction like melting due to thermal effect. The tested results expect to be applied to the fundamental data which interprets the combination mechanism of the semiconductors from artificial microwave environment.