A high-rel embedded ferroelectric memory

An 8 Kbit ferroelectric nonvolatile memory (FeRAM) has been designed and fabricated for embedded memory applications requiring high reliability operation such as space and radio frequency identification (RFID). It features a wide operating supply range of 2.7-3.6 V, operating temperature range of -60°C to +125°C, and robust memory cell data protection. The memory write and read cycle time is programmable to as short as 90 ns with an access time of 60 ns. Typical power consumption per cycle is 7.6 mW. Energy consumption per cycle is 0.94 nJ. The silicon area used is 0.28 mm² for 0.35 μm design rules.