Impact of initial-oxidation on 1/f noise and subthreshold swing of n-channel MOSFETs

The impact of initial-oxidation on Low-frequency noise and subthreshold swing of MOSFETs is investigated. The low-frequency noise is improved significantly with initial-oxidation and SS reduction is observed. Analysis on experimental results shed light on the well-known controversy about the origin of low-frequency noise. In this paper, the impact of initial-oxidation in thin gate oxide n-channel MOSFETs is characterized across gate-bias IV.