Ag/a-Si:H/c-Si resistive switching nonvolatile memory devices

Nanoscale Ag/a-Si:H/c-Si based resistive switching nonvolatile memory devices have been fabricated and examined with active areas down to 50*50 nm². Close to 100% device yield was achieved without high voltage forming. The on/off resistance ratio increases as the device size is reduced, while the on-state resistance is insensitive to the device size down the smallest scales. This nanoscale resistive switching structure offers the potential as ultra-high density crossbar non-volatile memory devices. In the on-state, a rectifying I-V behavior was observed, a property desirable for large scale integration.