Highly efficient mid-infrared OPO based on low-loss Orientation-Patterned GaAs samples

In this paper, we report on what is, to our knowledge, the highest efficiency (57 %) and average power (1.2 W) obtained with a GaAs OPO in the mid-infrared region (3-5 mum). These results have been demonstrated thanks to the development of a low-optical-losses orientation-patterned GaAs (OP-GaAs) fabrication process. Our orientation-patterned quasiphase matching structures were produced by bonding together two 2" GaAs wafers. Standard photo-lithography and etching processes can then be used to define multi-grating 2-inches wafer.