Identifying the origin of Non-Radiative Recombination in In(Ga)As Quantum Dot Lasers

Using p-doped and undoped InGaAs quantum-dot samples, where the elevated temperature threshold current performance is similar, we identify the important non-radiative recombination mechanisms in all InGaAs quantum-dot-lasers using measurements of the non- radiative recombination and un-amplified spontaneous emission.