Microwave Noise Characterization of Enhancement-Mode AlGaN/GaN/InGaN/GaN Double-Heterojunction HEMTs

In this work, we report the microwave noise characterization of E-mode double-heterojunction HEMT (DH-HEMT). The E-mode DH-HEMT shows reduced noise figure compared to its D-mode counterpart, mainly owing to the lower gate leakage current achieved by the Schottky barrier enhancement in fluorine-plasma treated gate region and the favorable bias conditions for the E-mode HEMT.