Difference of 2-MeV electron-irradiation-induced performance degradation in FD-SOI MOSFETs fabricated on ELTRAN and UNIBOND wafers

The degradation of the electrical performance of 2-MeV electron-irradiated thin gate oxide FD-SOI MOSFETs fabricated on ELTRAN and UNIBOND wafers is reported. The difference of the degradation is examined by analyzing the extracted MOS-transistor parameters. The degradation of the performance is discussed taking into account the front-back gate coupling effect and the floating body effect.