Evaluation of SiGeC HBT Varactor using different Collector access and Base-Collector junction Configuration in BiCMOS technologies

This paper is focused on the evaluation of SiGeC HBT varactor in BiCMOS technologies. First, we compare a standard collector-base junction varactor with the contribution of specific collector between a low cost SiGeC HBT module. From this, we suggest new types of structure with no additional mask which allows to keep high quality factor and to have a wide tuning range (3:1) between standard diode P+/Nwell and HBT varactor with SIC implant.