Large Signal Modeling of High Efficiency SiGe HBTs for Power Amplifier Applications

Large-signal compact modeling of SiGe HBTs integrated into a new IBM BICMOS technology geared towards high-efficiency power amplifiers is described. The technology exhibits a record 73% PAE at 5.75 GHz in class AB operation. A scalable HiCUM model (high current model) is developed to accurately model the DC, small-signal and large-signal characteristics. Results of DC, f_T characteristics, output power, PAE and AM-PM performance of the device are discussed in detail.