Heterogeneous Integration of III-V Active Devices on a Silicon-on-Insulator Photonic Platform

We present the heterogeneous integration of III-V active opto-electronic devices on top of a silicon-on-insulator photonic integrated circuit. This is achieved by adhesive die-to-wafer bonding of an unprocessed InP/InGaAsP epitaxial layer structure, after which laser diodes and photodetectors were fabricated in the bonded layer and optically coupled to the underlying silicon-on-insulator waveguide circuit.