A Comparison of Linac and 60Co Response of the CD4007UBE CMOS Inverter

The n-channel saturated threshold voltage shift of a complementary metal-oxide semiconductor (CMOS) inverter was measured as a function of average and peak dose rate irradiation derived from an electron linear accelerator (LINAC). At peak dose rates below 108 rad(Si)/s, the results are dose-rate-independent and comparable to those obtained using a steady-state 60Co source; at higher peak dose rates, less damage per unit dose was observed.