Measurements of Dose to Failure versus Dose Rate for CMOS/NMOS Static RAMS

4K×4 CMOS/NMOS static RAMS have been tested to failure at 23, 70, 270 and 1,560 rad (Si) hour. Catastrophic failure was observed to occur at relatively small dose increments after parametric failure. The relation between failure dose and dose rate has been examined by the application of linear system theory.