Simulation Approach for Modeling Single Event Upsets on Advanced CMOS SRAMS

A pair of simulation routines have been developed in order to accurately model single event upsets in advanced CMOS SRAMs. Simulation problems addressed are those associated with modelling minority carrier charge storage and multilayer charge collection effects. As a result, the decoupling resistance to harden the cell for an advanced CMOS structure has been accurately estimated and a simulation technique for modelling the "ion shunt" effect has been developed. This work describes a simulation method for routine evaluation of single event effects on circuit response.