Radiation Hardness of 256-Bit GaAs C-JFET Ram

A low-power complementary RAM using GaAs enhancement N- and P-channel junction field effect transistors has been developed at MDMC. The power dissipation per memory cell is 1 μW. The RAM's logic upset level for pulsed ionizing radiation is in the range of 1010 to 3 × 1011 rad(GaAs)/s. A total gamma dose of 1.5 × 108 rad(GaAs) does not affect the RAM operation. Previous tests were performed with RAMs using four N-channel JFETs and resistive loads in the memory cell.