High Performance Radiation Hard CMOS/SOS Technology

This paper describes the ionizing radiation effects on Si-gate CMOS/SOS short channel devices having channel lengths ranging from 1.8μm to 3.8μm. These short channel CMOS/SOS devices exhibit very high speed performance; the 1.8μm channel length devices achieve a propagation delay time of 0.19 ns at 10V and 0.26 ns at 5V while the 2.8μm channel length devices achieve a propagation delay time of 0.41 ns at 10V and 0.71 ns at 5V. Post-radiation n-channel back leakages of ≤0.1μa/mil of channel width and threshold voltage shifts of ≤ 1V for both n and p-channel devices were obtained after 106 rads (Si) on the 2.8μm channel length devices.