a-plane GaN Shear Wave Thin Film Resonator

This paper focuses on metal-organic-vapor-phase-epitaxial (MOVPE) grown on a-plane gallium-nitride (GaN), representing a novel approach for piezoelectric materials with good prospects for quartz-crystal-microbalance (QMB), like sensors with respect to its biocompatibility and frequency filter applications. Material characteristics of gallium-nitride as well as the processing of shear wave resonators and their acoustical characteristics are as well discussed