Demonstration of motor drive with SiC normally-off IBMOSFET/SBD power converter

Normally-off power MOSFET with low R_ons has been developed. IEMOSFET on 4H-SiC carbon-face wafer exhibits an extremely low R_ons of 1.8mΩcm² with a blocking voltage of 660V. The effective channel mobility of this device is 90 cm²/Vs which corresponds to the channel resistance of 0.8mΩcm². A step-down converter was fabricated with the normally-off IEMOSFET and SBD, and the operation of 400 W DC motor drive was successfully observed at room temperature.