A diode structure with anode side buried p doped layers for damping of dynamic avalanche

In this paper we present a novel 3.3 kV diode concept with anode side buried p doped layers. These p doped layers could retard the arising of the electric field and consequently postpone the onset of the dynamic avalanche at the pn-junction. Isothermal numerical simulation results suggested that this novel structure could permit balanced improvement of the static as well as the dynamic behaviors.