Hot-Carrier Reliability and Analog Performance Investigation of DMG-ISEGaS MOSFET

Dual-material-gate (DMG) insulated shallow extension gate-stack MOSFET involving dielectric pocket (DP) and DMG assimilation onto the conventional MOSFET has been studied. Simulations reveal a reduction in substrate leakage current, linearity improvement, enhancement in - g_m/I_DS, early voltage (V_EA), and g_m/g_d, down to 50-nm gate length as an outcome of this DP and DMG integration.