A 1.8V 4Mb Floating-Gate NOR Type B4-Flash Test Chip for 100MB/s Programming Speed

A 1.8V 4 Mb floating-gate flash test chip utilizing back bias assisted band-to-band tunneling induced hot electron (B4-HE) injection mechanism (B4-Flash) has been fabricated. Double source line architecture (DSLA) and selective verifying method (SVM), applied to NOR arrayed B4-Flash enables to achieve 100 MB/s programming speed. The MLC capability of B4-Flash memory is also shown by realizing three levels of programmed Vth distribution with 0.8V width.