Microstructure, Charge Transport and Trapping in Anisotropic Polymeric Thin Film Transistors

In this work we have used the directional solidification of a crystallizing solvent to further manipulate the microstructure of P3HT thin films, controlling the orientation and size of the disordered grain boundary regions. Resulting films have a very anisotropic distribution of grain boundaries in the plane of the substrate, with periodic crystalline regions. By fabricating thin film transistors with these anisotropic films, and subsequently fitting temperature dependent mobility data to the Mobility Edge Model, we have means to explore the relationship between trap density within grain boundaries and charge transport.