Requirements of the Low Energy Boron Halo Implantation for the Next Generation of LOP/LSTP Devices

The capability of a medium current implanter, the MC3, has been evaluated for low energy halo implantations. 1. Uniformity within a wafer is good even at 3keV, 60-degree tilt angle. 2. Uniform channeling profiles are observed within a 300- mm wafer. 3. The vertical and horizontal beam divergence angles are about plusmn0.2 degree even for low energy boron beams. 4. Parallelism is under 0.15 degree at low energy boron. The data suggest that the MC3 can be also used for the next generation halo implantation.