The Growth of III-V Nitrides Heterostucture on Si Substrate by Plasma-Assisted Molecular Beam Epitaxy

This article reports the use of plasma-assisted molecular beam epitaxy (MBE) to grow InGaN/GaN/AlN on Si (111) substrate. The film is then characterized by high-resolution x-ray diffraction (HR-XRD) and photoluminescence (PL). The studies show that the structural quality of the film is comparative to the values reported in the literature. PL measurement exhibits a sharp and intense band edge emission of GaN with the absence of yellow emission band, indicating good optical quality of the film.