Studies on Electron Penetration Versus Beam Acceleration Voltage in Energy-Dispersive X-Ray Microanalysis

Energy-dispersive X-ray microanalysis technique has been commonly used in failure analysis. It is vital for an analyst to understand the electron penetration depth in a certain material so as to be able to select an appropriate accelerating beam voltage. In this paper, we will use the Monte Carlo electron flight simulation method to obtain the electron penetration data at the different beam acceleration voltages of 5kV, 10kV, 15kV, 20kV, 25kV and 30 kV for the various possible elements/materials in wafer fabrication.