Robustness of GaAs Field Plate Based MESFETs

High voltage, field plate based GaAs MESFETs have great potential for providing high performance MMICs with low cost, high reliability, and immediate production capability required by today's applications. With high voltage operation comes the potential under nonideal operating conditions for premature burnout. Robustness becomes a serious concern for any high voltage application. High Voltage MSAG^TM (HVMSAG^TM) MESFETs exhibit high reliability and excellent robustness against 10:1 VSWR load mismatches at 30V when junction temperatures are restricted to less than 350degC. Void free die attach and low MESFET thermal resistance are important factors for enhancing device robustness.