Performance of a Silicon-Based Spin Diffusion Transistor

The electrical and magnetic characteristics of three-terminal, Si-based spin diffusion transistor are described, both theoretically and experimentally. The device, functions by using a ferromagnetic emitter to inject spin-polarized carriers via a tunnel barrier into a silicon base. Moreover, the current gain is magnetically sensitive, assuming that the base width is less than the silicon spin diffusion length. Theoretically, these devices can be modeled quantum mechanically as two tunnel barriers in series, with the base controlling the relative applied bias. Experimentally, this device has both a Schottky barrier and a tunnel barrier present at the ferromagnet/Si interface.