Characteristics for Bloch line memory with field access scheme

The characteristics of functions such as read/write gate operation and vertical Bloch line (VBL) propagation have been investigated for a VBL memory with a field access scheme. The memory is compared of a minor loop utilizing a stabilized ring-shaped domain and a read/write gate with three-level conductor patterns. Potential wells that define the VBL bit position are formed by an in-plane field from a zigzag conductor for evaluation of VBL propagation. The read/write gate and VBL pair propagation operations are confirmed. A bias field margin of 7 Oe (10%) is obtained, verifying the feasibility of this device.<>