Accurate Modeling and Characterization of Mobility in Tensile and Compressive Stress for State-of-the-Art Manufacturing NMOSFETS

A novel mobility model and its characterization technique were presented for manufacturing strained-Si NMOSFETs. The mobility terms in Matthiessen's form can be precisely decoupled to investigate Coulomb scattering effect for different stress conditions. Stress devices suffered serious Coulomb scattering at high vertical field, however, tensile stress NMOSFET exhibits better mobility enhancement than compressive counterpart due to less Coulomb scattering.