Survey on Very Fast TLP and Ultra Fast Repetitive Pulsing for Characterization in the CDM-Domain

Charged device model pulses may be less than 1 ns wide with peak currents exceeding 10 A. They are a true challenge for the ESD protection of advanced technologies with shrinking safety margins. This paper surveys the characterization with very fast rising single shot TLP pulses and the CDM-like stress, if the square pulse is injected into an integrated circuit via a single pin. Complementing the high-voltage VF-TLP, repetitive medium voltage techniques with ps-rise times are necessary to meet the CDM-goals.