The Study of Improving the Performance of HgCdTe Photovoltaic Detectors with Anti-reflection Coating

Thls paper presents a method to improve HgCdTe detectors' performance by anti-reflection coating. Back-illuminated HgCdTe photovoltaic detectors have been fabricated on molecular beam epitaxy (MBE) HgCdTe layer on top of GaAs substrate by ion implantation doping. ZnS film is deposited on the surface of GaAs substrate by magnetron sputtering. With this AR coating, the black body detectivity, responsivity and quantum efficiency have the increase of 41%, 45% and 100% respectively. That is a great help to improve the property of HgCdTe detectors.