Measurement of the Trapping Time Constants in Neutron-Irradiated Silicon Pad Detectors

Silicon pad-detectors fabricated from oxygenated silicon were irradiated with reactor neutrons with fluences between 1 middot 10¹⁴ n_eq/cm² and 4 middot 10¹⁵ n_eq/cm². The transient current technique was used to measure the trapping probability for holes and electrons. The measured trapping probabilities scale linearly with the fluence.