High Temperature Stable [Ir3Si-TaN]/HfLaON CMOS with Large Work-Function Difference

We report novel 1000°C-stable [Ir₃Si-TaN]/HfLaON CMOS for the first time, where the self-aligned and gate-first gate-first process are full compatible to current VLSI. Good ϕm-eff of 5.08 and 4.24 eV, low Vt of -0.10 and 0.18 V, high mobility of 84 and 217 cm²/Vs at 1.6 nm EOT, and small 85°C BTI <20 mV (10 MV/cm for 1 hr) are measured.