Highly Linear and Efficient AlGaAs/GaAs HBT Power Amplifier with Integrated Linearizer

This paper gives the description of a novel linearization technique using Schottky diode as an active linearizer thereby improving the gain compression and reducing nonlinear phase distortion in AlGaAs/GaAs heterojunction bipolar transistor (HBT). This leads to highly linear and efficient amplification of the QPSK, OFDM. A two stage power amplifier using AlGaAs/GaAs HBT process exhibits an output power (@P1dB) of 25dBm and power added efficiency as high as 43%